View MAX8552_277161.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

19-2997; Rev 0; 10/03
10
KIT ATION EVALU E AILABL AV
-PIN TD
m
m x 3.0
General Description
The MAX8552 highly integrated monolithic MOSFET driver is capable of driving a pair of power MOSFETs in single or multiphase synchronous buck-converter applications that provide up to 30A output current per phase. The MAX8552 simplifies PC board layout in multiphase systems, particularly three phases and higher. High input voltages up to 24V allow the MAX8552 to be used in desktop, notebook, and server applications. Each MOSFET driver is capable of driving 3000pF capacitive loads with only 12ns propagation delay and 11ns (typ) rise and fall times, making the MAX8552 ideal for high-frequency applications. User-programmable break-before-make circuitry prevents shoot-through currents, maximizing converter efficiency. An enable input allows total driver shutdown (<1A typ) for power-sensitive portable applications. The PWM control input is compatible with TTL and CMOS logic levels. The MAX8552, along with the MAX8524 or the MAX8525 multiphase controllers, provides flexible 2-, 3-, 4-, 6-, or 8-phase CPU core-voltage supplies. The MAX8552 is available in space-saving 10-pin TDFN and MAX packages and is specified for -40C to +85C operation. o Single-Phase Synchronous Drivers o Up to 24V (max) Input Voltage
m
High-Speed, Wide-Input, Single-Phase MOSFET Driver
Features
FN
Multiphase Buck Converters Voltage Regulator Modules (VRMs) Processor-Core Voltage Regulators Desktops, Notebooks, and Servers Switching Power Supplies
3.0
VCC 4.5V TO 6.5V ON OFF PWM CONTROL SIGNAL
m
MAX8552
o 0.1A (typ) Quiescent Current in Shutdown Over Temperature o 0.5/1.0/0.7/1.3 ROUT Drivers o 12ns (typ) Propagation Delay o 11ns (typ) Rise/Fall Times with 3000pF Load o Adaptive Dead Time and User-Programmable Delay Mode o Up to 2MHz Operation with TDFN Package o Up to 1.2MHz Operation with MAX Package o Enable Function o TTL- and CMOS-Compatible Logic Inputs o Available in a Space-Saving Thin DFN Package
Ordering Information
PART MAX8552EUB MAX8552ETB TEMP RANGE -40C to +85C -40C to +85C PIN-PACKAGE 10 MAX 10 TDFN 3mm x 3mm
Applications
Pin Configurations appear at end of data sheet.
Typical Operating Circuit
VIN 6V TO 24V VCC BST
GND
DH VOUT 1.45V AT 20A
EN MAX8552 LX DLY DL
PWM
PGND
________________________________________________________________ Maxim Integrated Products
1
For pricing delivery, and ordering information please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.
High-Speed, Wide-Input, Single-Phase MOSFET Driver MAX8552
ABSOLUTE MAXIMUM RATINGS
VCC to GND ..............................................................-0.3V to +7V PWM, EN, DL, DLY to GND ........................-0.3V to (VCC + 0.3V) BST to PGND..........................................................-0.3V to +35V LX to PGND ...............................................................-1V to +28V DH to PGND ..............................................-0.3V to (VBST + 0.3V) DH, BST to LX...........................................................-0.3V to +7V DH and DL Continuous Current......................................200mA Continuous Power Dissipation (TA = +70C) 10-Pin MAX (derate 5.6mW/C above +70C) ........444.4mW 10-Pin TDFN (derate 24.4mW/C above +70C) .......1951mW Operating Temperature Range ...........................-40C to +85C Junction Temperature ......................................................+150C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC = VBST = VDLY = VEN = 5V, VGND = VPGND = VLX = 0V; TA= -40C to +85C, unless otherwise noted. Typical values are at TA = +25C.) (Note 1)
PARAMETER UNDERVOLTAGE PROTECTION VCC Supply Voltage Range Undervoltage Lockout (UVLO) 0.25V hysteresis VCC rising VCC falling PWM = GND or VCC, TA= +25C PWM = GND or VCC, TA = +85C VCC = 6.5V, PWM = GND, RDLY = 47k PWM = GND PWM = VCC fPWM = 250kHz, 50% duty cycle PWM = GND PWM = VCC PWM = GND PWM = VCC 250kHz VBST = 4.5V VBST = 5V VBST = 4.5V VBST = 5V 4.5 3.25 3.0 0.04 0.1 330 25 2 1.8 0.1 1.2 0.1 1.2 2 1.3 1.2 0.7 0.6 1.1 500 50 3 3 10 2 10 2 4 2.4 A A mA mA A mA A mA 6.5 3.80 3.5 1 A V V CONDITIONS MIN TYP MAX UNITS
Shutdown Supply Current
VEN = 0V, VCC = 6.5V
Idle Supply Current (ICC)
No switching No switching
Control Supply Current (IGND) Switching No switching, ICC Driver Supply Current (IPGND) No switching, IBST Switching, IBST + ICC DRIVER SPECIFICATIONS (See the Timing Diagram) PWM = GND, sourcing current DH Driver Resistance PWM = VCC, sinking current
2
_______________________________________________________________________________________
High-Speed, Wide-Input, Single-Phase MOSFET Driver
ELECTRICAL CHARACTERISTICS (continued)
(VCC = VBST = VDLY = VEN = 5V, VGND = VPGND = VLX = 0V; TA= -40C to +85C, unless otherwise noted. Typical values are at TA = +25C.) (Note 1)
PARAMETER PWM = GND, sourcing current DL Driver Resistance PWM = VCC, sinking current DH Rise Time (trDH) DH Fall Time (tfDH) DL Rise Time (trDL) DL Fall Time (tfDL) DH Propagation Delay PWM = VCC PWM = GND PWM = VCC PWM = GND PWM falling (tpDHf) PWM = VCC, DL falling (tpDHr) PWM rising (tpDLf) DL Propagation Delay EN VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +25C VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +85C Input-Voltage High Threshold Input-Voltage Low Threshold PWM VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +25C VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +85C Input-Voltage High Threshold Input-Voltage Low Threshold Input Threshold Hysteresis DLY Delay Program Accuracy Delay Disable-Detection Threshold RDLY = 47k, DL fall to DH rise 67.5 4.0 90.0 112.5 4.7 ns V VCC = 6.5V VCC = 4.5V 1.2 0.5 0.01 0.1 3.5 V V V 1 A VCC = 6.5V VCC = 4.5V 0.8 0.01 0.1 2.5 V V 1 A PWM = GND, LX falling (tpDLr) VBST - VLX = 5V CONDITIONS VCC = 4.5V VCC = 5V VCC = 4.5V VCC = 5V VBST = 5V, 3000pF load VBST = 5V, 3000pF load VCC= 5V, 3000pF load VCC= 5V, 3000pF load VBST = 5V VBST = 5V MIN TYP 1.0 0.9 0.5 0.45 14 9 11 8 12 14 9 16 ns ns ns ns ns ns 0.8 MAX 1.6 UNITS
MAX8552
Leakage Current
Leakage Current
Note 1: Specifications are production tested at TA = +25C. Maximum and minimum limits are guaranteed by design and characterization.
_______________________________________________________________________________________
3
High-Speed, Wide-Input, Single-Phase MOSFET Driver MAX8552
Typical Operating Characteristics
(VCC = VDLY = 5V, CHS_LOAD = CLS_LOAD = 3000pF, 50% duty ratio.)
PACKAGE-POWER DISSIPATION vs. PWM FREQUENCY
MAX8552 toc01
PACKAGE-POWER DISSIPATION vs. CAPACITIVE LOAD ON DH AND DL
MAX8552 toc02
DL RISE AND FALL TIMES vs. CAPACITIVE LOAD
18 16 RISE AND FALL TIME (ns) 14 12 10 8 6 4 2 0 1000 2000 3000 CAPACITANCE (pF) 4000 5000 FALL TIME RISE TIME
MAX8552 toc03
500 450 400 350 PD (mW) 300 250 200 150 100 50 0 0
A: CHS = 3300pF; CLS = 3300pF B: CHS = 3300pF; CLS = 5600pF C: CHS = 1500pF; CLS = 3300pF B A
500 450 400 350 PD (mW) 300 250 200 150 100
A: fS = 300kHz B: fS = 600kHz C: fS = 1MHz C
20
C
B
A CDH = CDL VCC = 6.5V 1000 1500 2000 2500 3000 3500 4000 4500 5000 CAPACITANCE (pF)
VCC = 6.5V 200 400 600 800 1000 1200
50 0
PWM FREQUENCY (kHz)
DH RISE AND FALL TIMES vs. CAPACITIVE LOAD
MAX8552 toc04
DH AND DL RISE AND FALL TIMES vs. TEMPERATURE
MAX8552 toc05
CONTROL-CIRCUITRY CURRENT vs. PWM FREQUENCY
MAX8552 toc06
25 RISE TIME RISE AND FALL TIME (ns) 20
18 16 RISE AND FALL TIME (ns) 14 12 10 8 6 2 4 DL FALL DH RISE
1.2 1.0 VCC = 6.5V 0.8 IGND (mA)
DL RISE DH FALL
15
0.6 0.4 0.2 0
VCC = 5V
10 FALL TIME 5
VEN = 0V
0 1000 1500 2000 2500 3000 3500 4000 4500 5000 CAPACITANCE (pF)
0 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (C)
0
200
400
600
800
1000
1200
PWM FREQUENCY (kHz)
PROPAGATION DELAY vs. TEMPERATURE
MAX8552 toc07
PROGRAMMABLE DELAY (tDLY) vs. RDLY
MAX8552 toc08
TYPICAL APPLICATION CIRCUIT SWITCHING WAVEFORMS
MAX8552 toc09
30 DL FALL TO DH RISE 25 PROPAGATION DELAY (ns) 20 15 10 PWM RISE TO DL FALL 5 0 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (C) PWM FALL TO DH FALL
200 180 PROGRAMMABLE DELAY (ns) 160 140 120 100 80 60 40 20 0 5 25 45 65 RDLY (k) 85 105
VPWM
5V/div
VLX
10V/div
VDL
5V/div
125
VDH 100ns/div
20V/div
4
_______________________________________________________________________________________
High-Speed, Wide-Input, Single-Phase MOSFET Driver MAX8552
Pin Description
PIN 1 NAME VCC FUNCTION Input Supply Voltage. Connect to a supply voltage in the 4.5V to 6.5V range. Bypass to PGND with a 2.2F or larger capacitor, and bypass to GND with a 0.47F or larger capacitor. External Synchronous-Rectifier N-MOSFET Gate-Driver Output. Swings between VCC and PGND. Anticrowbar feature prevents DL from turning on until DH is off and (LX - PGND) < 2V. DL is pulled to GND in shutdown. Power Ground Analog Ground Dead-Time Delay Programming Input. Connect a resistor from DLY to GND to set the dead-time delay between when DL falls and when DH rises. Connect DLY to VCC to disable the delay function. See the Typical Operating Characteristics for RDLY selection. PWM Input. DH is high when PWM is high; DL is high when PWM is low. Input frequency can be as high as 1.2MHz for the 10-pin MAX package and as high as 2MHz for the 10-pin TDFN package. Enable Input. Drive high to enable output drivers. Drive low to disable output drivers and place the IC in low-power shutdown mode. Switching Node and Inductor Connection. Low power supply for the DH high-side gate driver. Connect to the source of the high-side N-MOSFET and the drain of the low-side N-MOSFET, as well as the switched side of the inductor. External High-Side N-MOSFET Gate-Driver Output. Swings between LX and BST. Anticrowbar feature delays DH from turning on until DL is off. An additional user-programmable delay can be added. DH is pulled to LX in shutdown. Boost Flying-Capacitor Connection. Gate-drive power supply for DH high-side gate driver. Connect a 0.47F or larger capacitor between BST and LX. Exposed Paddle. Connect to GND.
2 3 4 5
DL PGND GND DLY
6 7
PWM EN
8
LX
9
DH
10 --
BST Exposed Paddle*
*10-pin TDFN only.
_______________________________________________________________________________________
5
High-Speed, Wide-Input, Single-Phase MOSFET Driver MAX8552
Timing Diagram
tpDLf tpDHf
PWM DL tfDL tpDHr (tDLY)* tpDLr trDL
LX trDH tfDH
DH *WHEN RDLY IS USED, tpDHr BECOMES THE LONGER OF THE USER-PROGRAMMABLE TIME DELAY, tDLY, OR THE ADAPTIVE DEAD TIME, tpDHr. DRAWING IS NOT TO SCALE.
Functional Diagram
MAX8552
PWM
BST DHON DHOFF DRIVE LOGIC VCC DL PGND DH LX
VCC EN
UVLO
DELAY LOGIC
DLON DLOFF
DLY
DELAY PROGRAM LXLOWDETECT
6
_______________________________________________________________________________________
High-Speed, Wide-Input, Single-Phase MOSFET Driver
Detailed Description
The MAX8552 single-phase gate driver, along with the MAX8524/MAX8525 multiphase controllers, provide flexible one- to eight-phase CPU core-voltage supplies. The 1.0/1.3 driver resistance allows up to 30A output current per phase. Each MOSFET driver in the MAX8552 is capable of driving 3000pF capacitive loads with only 12ns propagation delay and 11ns (typ) rise and fall times, allowing operation up to 1.2MHz per phase. Adaptive dead time controls MOSFET turn-on, and user-programmable dead time provides additional flexibility for high-side MOSFET turn-on. This maximizes converter efficiency, while allowing operation with a variety of MOSFETs and PWM-controller ICs. An undervoltage-lockout circuit allows proper power-on sequencing. The PWM signal input is both TTL and CMOS compatible. An enable input allows total driver shutdown (<0.1A typ) for power-sensitive portable applications.
Applications Information
Decoupling of VCC
VCC provides the supply voltage for the internal logic circuits. Bypass VCC with a 2.2F or larger capacitor to PGND and a 0.47F or larger capacitor to GND to limit noise to the internal circuitry. Connect these bypass capacitors as close to the IC as possible.
MAX8552
Boost Flying-Capacitor Selection
The MAX8552 uses a bootstrap circuit to generate the necessary drive voltage (V DH) to fully enhance the high-side N-MOSFET. The selected high-side MOSFET determines appropriate boost capacitance values (C6 in the Typical Application Circuit, Figure 1), according to the following equation: CBST = QGATE / VBST where QGATE is the total gate charge of the high-side MOSFET and VBST is the voltage variation allowed on the high-side MOSFET driver. Choose VBST = 0.1V to 0.2V when determining CBST. The boost flying-capacitor should be a low-equivalent series resistance (ESR) ceramic capacitor.
MOSFET Gate Drivers (DH, DL)
The high-side driver (DH) has a 1.3 (typ) sourcing resistance and 0.7 sinking resistance, resulting in 4A peak sourcing current and 7A peak sinking current with a 5V supply voltage. The low-side driver (DL) has a typical 1.0 sourcing resistance and 0.5 sinking resistance, yielding 5A peak sourcing current and 10A peak sinking current. This reduces switching losses, making the MAX8552 ideal for both high-frequency and highoutput-current applications.
RDLY Selection
Connect DLY to VCC to disable the programmable delay function and default to the adaptive delay time. To program a longer specific delay time between the low-side MOSFET driver turn-off and the high-side MOSFET turnon, connect a delay resistor, RDLY, between DLY and GND (R1 in the Typical Application Circuit, Figure 1). See the Typical Operating Characteristics to select RDLY.
Shoot-Through Protection and Programmable Delay (tDLY)
The MAX8552 incorporates adaptive shoot-through protection for the switching transition after the high-side MOSFET turns off and before the low-side MOSFET turns on and vice versa. The low-side driver turns on only when the LX voltage falls below 2.4V. Furthermore, the delay time between the low-side MOSFET turn-off and high-side MOSFET turn-on can be adjusted by selecting the value of R1 (see the RDLY Selection section).
Avoiding dV/dt Turning on the Low-Side MOSFET
At high input voltages, fast turn-on of the high-side MOSFET can momentarily turn on the low-side MOSFET due to the high dV/dt appearing at the drain of the low-side MOSFET. The high dV/dt causes a current flow through the Miller capacitance (CRSS) and the input capacitance (CISS) of the low-side MOSFET. Improper selection of the lowside MOSFET that results in a high ratio of CRSS/CISS makes the problem more severe. To avoid this problem, minimize the ratio of CRSS/CISS when selecting the low-side MOSFET. Adding a 1 resistor between BST and C BST can slow the high-side MOSFET turn-on. Similarly, adding a small capacitor from the gate to the source of the high-side MOSFET has the same effect. However, both methods work at the expense of increased switching losses.
Undervoltage Lockout
When VCC is below the UVLO threshold (3.5V typ), DH and DL are held low. Once VCC is above the UVLO threshold and while PWM is low, DL is driven high and DH is driven low. This prevents the output of the converter from rising before a valid PWM signal is applied.
EN
When EN is low, the MAX8552 is in shutdown mode and the total input current is reduced to less than 1A for power-sensitive applications. In shutdown mode, both DH and DL are held low. When EN goes high, the MAX8552 becomes active.
_______________________________________________________________________________________
7
High-Speed, Wide-Input, Single-Phase MOSFET Driver MAX8552
VCC 4.5V TO 6.5V 1 C5 4.7F C4 0.47F
D1 10 C1 10F C2 10F C3 10F
VIN 6V TO 24V
VCC
BST
4
GND
DH
9 C6 0.47F
N1
N2 L1 VOUT 1.45V AT 25A
7 ON OFF R1 5
EN MAX8552 LX DLY DL
8
2
N3
N4 C7-C10 390F
PWM CONTROL SIGNAL
6
PWM
PGND
3
Figure 1. Typical Application Circuit
Table 1. Typical Component Values (500kHz Operation, 25A/Phase Output Current)
DESIGNATION C1, C2, C3 C4 C5, C6 C7-C10 D1 L1 N1, N2 N3, N4 R1 DESCRIPTION 10F, 25V ceramic capacitor 4.7F, 10V ceramic capacitor 0.47F, 10V ceramic capacitor 390F/2V SP capacitor 30V, 200mA, VF = 0.5V Schottky diode 0.66H/29A, 0.9m typical RDC resistance 30V, 14A N-MOSFET 30V, 18A N-MOSFET 6k - 125k = 1%, 1/8W resistor PART Taiyo Yuden TMK432BJ106MM Taiyo Yuden LMK316 BJ475ML Taiyo Yuden LMK107BJ474KA Panasonic EEFUE0D391XR Fairchild BAT54S Panasonic PCC-NX3 International Rectifier IRF7821 International Rectifier IRF7832 Panasonic
8
_______________________________________________________________________________________
High-Speed, Wide-Input, Single-Phase MOSFET Driver
Layout Guidelines
The MAX8552 MOSFET driver sources and sinks large currents to drive MOSFETs at high switching speeds. The high di/dt can cause unacceptable ringing if the trace lengths and impedances are not well controlled. The following PC board layout guidelines are recommended when designing with the MAX8552: 1) Place all decoupling capacitors as close to their respective IC pins as possible. 2) Minimize the length of the high-current loop from the input capacitor, the upper switching MOSFET, and the low-side MOSFET back to the input-capacitor negative terminal. 3) Provide enough copper area at and around the switching MOSFETs and inductors to aid in thermal dissipation. 4) Connect PGND of the MAX8552 as close as possible to the source of the low-side MOSFETs. 5) Keep LX away from sensitive analog components and nodes. Place the IC and the analog components on the opposite side of the board from the power-switching node if possible. A sample layout is available in the MAX8552 evaluation kit.
MAX8552
Chip Information
TRANSISTOR COUNT: 638 PROCESS: BiCMOS
Pin Configurations
TOP VIEW
VCC 1 DL PGND GND DLY 2 3 4 5 10 BST 9 DH LX EN PWM VCC 1 DL 2 PGND 3 GND 4 DLY 5 MAX8552 10 BST 9 DH 8 LX 7 EN 6 PWM
MAX8552
8 7 6
MAX 3mm x 4.9mm
TDFN 3mm x 3mm
_______________________________________________________________________________________
9
High-Speed, Wide-Input, Single-Phase MOSFET Driver MAX8552
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.)
10LUMAX.EPS
1 1
e
10
4X S
10
INCHES MAX DIM MIN 0.043 A 0.006 A1 0.002 A2 0.030 0.037 D1 0.116 0.120 D2 0.114 0.118 E1 0.116 0.120 E2 0.114 0.118 H 0.187 0.199 L 0.0157 0.0275 L1 0.037 REF b 0.007 0.0106 e 0.0197 BSC c 0.0035 0.0078 0.0196 REF S 0 6
MILLIMETERS MAX MIN 1.10 0.05 0.15 0.75 0.95 2.95 3.05 2.89 3.00 2.95 3.05 2.89 3.00 4.75 5.05 0.40 0.70 0.940 REF 0.177 0.270 0.500 BSC 0.090 0.200 0.498 REF 0 6
H y 0.500.1 0.60.1
1
1
0.60.1
TOP VIEW
BOTTOM VIEW
D2 GAGE PLANE A2 A b A1 D1
E2
c
E1 L1
L
FRONT VIEW
SIDE VIEW
PROPRIETARY INFORMATION TITLE:
PACKAGE OUTLINE, 10L uMAX/uSOP
APPROVAL DOCUMENT CONTROL NO. REV.
21-0061
I
10
______________________________________________________________________________________
High-Speed, Wide-Input, Single-Phase MOSFET Driver
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.)
MAX8552
L D A A2
PIN 1 ID
D2
1
N
1
b
PIN 1 INDEX AREA
C0.35 [(N/2)-1] x e REF. e
E
DETAIL A
E2
A1
k
C L
C L
L e A e
L
SEMICONDUCTOR
PROPRIETARY INFORMATION TITLE:
DALLAS
PACKAGE OUTLINE, 6, 8 & 10L, TDFN, EXPOSED PAD, 3x3x0.80 mm
NUMBER OF LEADS SHOWN ARE FOR REFERENCE ONLY
APPROVAL DOCUMENT CONTROL NO. REV.
1 2
21-0137
D
COMMON DIMENSIONS SYMBOL A D E A1 L k A2 MIN. 0.70 2.90 2.90 0.00 0.20 MAX. 0.80 3.10 3.10 0.05 0.40
0.25 MIN. 0.20 REF.
PACKAGE VARIATIONS PKG. CODE T633-1 T833-1 T1033-1 N 6 8 10 D2 1.500.10 1.500.10 1.500.10 E2 2.300.10 2.300.10 2.300.10 e 0.95 BSC 0.65 BSC 0.50 BSC JEDEC SPEC MO229 / WEEA MO229 / WEEC MO229 / WEED-3 b 0.400.05 0.300.05 0.250.05 [(N/2)-1] x e 1.90 REF 1.95 REF 2.00 REF
SEMICONDUCTOR
PROPRIETARY INFORMATION TITLE:
DALLAS
PACKAGE OUTLINE, 6, 8 & 10L, TDFN, EXPOSED PAD, 3x3x0.80 mm
APPROVAL DOCUMENT CONTROL NO. REV.
2 2
21-0137
D
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11 (c) 2003 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
6, 8, &10L, DFN THIN.EPS

▲Up To Search▲

Price & Availability of MAX8552

	To Download MAX8552 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .